provide excellent r symbol v ds v gs i dm i ar e ar t j , t stg symbol typ ma x 16.7 25 40 50 r jc 1.9 2.5 maximum junction-to-case b steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 pulsed drain current c power dissipation a t a =25c gate-source voltage drain-source voltage maximum junction-to-ambient a steady-state 18 18 30 avalanche current c 18 power dissipation b t c =25c p d continuous drain current g maximum units parameter t c =25c t c =100c 20 w junction and storage temperature range a p dsm c 2.5 1.6 -55 to 175 t a =70c i d a repetitive avalanche energy l=0.1mh c 37 mj 60 w t c =100c 30 AOD434 features v ds (v) = 20v i d = 18a (v gs = 10v) r ds(on) < 14m ? (v gs = 10v) r ds(on) < 16m ? (v gs = 4.5v) r ds(on) < 21m ? (v gs = 2.5v) r ds(on) < 30m ? (v gs = 1.8v) esd rating: 2kv hbm general description the AOD434 uses advanced trench technology to ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected to a 2kv hbm rating. standard product AOD434 is pb- free (meets rohs & sony 259 specifications). a od434l is a green product ordering option. a od434 and AOD434l are electrically identical. g d s t o-252 d-pak t op view drain connected to t ab g d s effect transistor n-channel enhancement mode field www.freescale.net.cn 1 / 4
AOD434 symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 10 a bv gso 12 v v gs(th) 0.5 0.75 1 v i d(on) 30 a 10.9 14 t j =125c 14.3 18 12.6 16 m ? 16.5 21 m ? 23.2 30 m ? g fs 36 s v sd 0.73 1 v i s 18 a c iss 1810 pf c oss 232 pf c rss 200 pf r g 1.6 ? q g (10v) total gate charge 40.1 nc q g (4.5v) total gate charge 8.9 q gs gate source charge 1.7 nc q gd 6.2 nc t d(on) 4ns t r 15 ns t d(off) 42.2 ns t f 18.2 ns t rr 23.2 ns q rr 4.9 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v ds =0v, i g =250ua body diode reverse recovery time body diode reverse recovery charge i f =18a, di/dt=100a/ s v gs =10v, i d =18a reverse transfer capacitance i f =18a, di/dt=100a/ s turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =0.56 ? , r gen =3 ? turn-off fall time electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =16v, v gs =0v v ds =0v, v gs =10v zero gate voltage drain current gate-body leakage current gate-source breakdown voltage r ds(on) static drain-source on-resistance forward transconductance diode forward voltage turn-on delaytime v gs =10v, v ds =10v, i d =18a v gs =0v, v ds =10v, f=1mhz switching parameters gate drain charge gate resistance v gs =0v, v ds =0v, f=1mhz maximum body-diode continuous current input capacitance output capacitance dynamic parameters m ? v gs =1.8v, i d =5a i s =1a,v gs =0v v ds =5v, i d =18a v gs =4.5v, i d =15a v gs =2.5v, i d =10a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by bond-wires. rev 3 : july 2005 www.freescale.net.cn 2 / 4
AOD434 typical electrical and thermal characteristic s 0 5 10 15 20 25 30 35 40 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2 v 2.5v 4.5v 10 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 5 10 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v v gs =2.5v 5 10 15 20 25 30 35 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =18a v gs =1.8v v gs =1.8v 25c 125c i d =18a www.freescale.net.cn 3 / 4
AOD434 typical electrical and thermal characteristic s 0 1 2 3 4 5 0 5 10 15 20 25 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0.1s 1 s 1 0s d c r ds(on) limited t j(max) =150c t a =25c v ds =10v i d =18a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 4
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